Integrated Circuits and Systems Group
... where MEMS meet Transistors

People

Umesh Chand

Postdoctoral Fellows
​Postdoctoral Fellow

Research Interests

​Transistor fabrication, Device structure innovations, Device electrical analysis, Device reliability, Integrated Circuit Technology, Memory Devices.

Selected Publications

Journal Papers:
  1. Umesh Chand, Chun-Yang Huang, Dayanand Kumar and Tseung-Yuen Tseng, “Metal Induced Crystallized Poly-Si-based Conductive Bridge Resistive Switching Memory Device with One Transistor and One Resistor Architecture” Applied Physics Lett. vol.107, no. 20 p.203502, November 2015.
  2. Umesh Chand, Kuan-Chang Huang, Chun-Yang Huang, and Tseung-Yuen Tseng, “Mechanism of Nonlinear Switching in HfO2 based Cross Bar RRAM with Inserting Large Band Gap Tunneling Barrier Layer” IEEE Trans. Electron Devices, vol.62, no. 11 p.3665, November 2015. 
  3. Umesh Chand, Chun-Yang Huang, , Jheng-Hong Jieng, Wen-Yueh Jang, Chen-Hsi Lin and Tseung-Yuen Tseng, “Suppression of Endurance Degradation by Utilizing Oxygen Plasma Treatment in HfO2 Resistive Switching Memory,” Applied Physics Lett., vol.106, no. 16 p.153502, April 2015.
  4. Umesh Chand, Kuan-Chang Huang, Chun-Yang Huang, and Tseung-Yuen Tseng, “Investigation of Thermal Stability and Reliability in HfO2 Based RRAM Devices with Cross bar Structure” Journal of Applied Physics vol.117, no. 18 p.184105, May 2015. 
  5. Umesh Chand, Chun-Yang Huang, and Tseung-Yuen Tseng, “Mechanism of High Temperature Retention Property (up to 200 oC) in ZrO2 Based Memory Device with Inserting ZnO Thin Layer,” IEEE Electron Device Lett. Vol. 35, No. 10, pp 1019-1021, Oct. 2014.
  6. Jagan Singh Meena, Simon Min Sze, Umesh Chand, and Tseung-Yuen Tseng “Overview of Emerging Non-volatile Memory Technologies” Nanoscale Research Letters Vol. 9, No.1, pp 526, Oct. 2014.
  7. Muhammad Ismail, Ijaz Talib, Anwar Manzoor Rana, Tsung-Ling Tsai, Umesh Chand, Ejaz Ahmed, Muhammad Younus Nadeem, and Muhammad Hussain, “Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications,” Solid State Communication., vol. 202, no. 6, p. 28, November 2014.
  8. Muhammad Ismail, Ijaz Talib, Chun-Yang Huang, Chung-Jung Hung, Tsung-Ling Tsai, Jheng-Hong Jieng, Umesh Chand, Chun-An Lin, Ejaz Ahmed, Anwar Manzoor Rana, Muhammad Younus Nadeem, and Tseung-Yuen Tseng, “Resistive switching characteristics of Pt/CeOx/TiN memory device,” Jpn. J. Appl. Phys., vol. 53, no. 6, p. 060303, May 2014.
  9. Muhammad Ismail, Ijaz Talib, Anwar Manzoor Rana, Ejaz Ahmed, Muhammad Younus Nadeem, Tsung-Ling Tsai, Umesh Chand, Chun-An Lin, and M.T. Bhatti, “Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device,” Chin. Phys. B Vol. 23, No. 12, pp 126101, Oct. 2014.
  10. Chun-Yang Huang, Umesh Chand, and Tseung-Yuen Tseng, “Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO2 Thin Film,” Applied Mechanics and Materials, vol. 543-547, pp. 3839-3842, Mar. 2014.
  11. Muhammad Ismail, Chun-Yang Huang, Debashis Panda, Chung-Jung Hung, Tsung-Ling Tsai, Jheng-Hong Jieng, Chun-An Lin, Umesh Chand, Anwar Manzoor Rana, Ejaz Ahmed, Ijaz Talib, Muhammad Younus, and Tseung-Yuen Tseng, “Forming-Free Bipolar Resistive Switching in Nonstoichiometric Ceria Films,” Nanoscale Res. Lett., vol. 9, no. 1, p. 45, Jan. 2014.
Conference Papers
  1. Umesh Chand, Chun-Yang Huang, and Tseung-Yuen Tseng, “Thickness Dependent Nonlinear Resistive Switching Behavior in ZrO2/HfO2 Double Layer Device” International Electron Devices and Materials Symposium 2014 (IEDMS 2014), Hualien, Taiwan, Nov. 20-21, 2014.
  2. Umesh Chand, Hsiang-Yu Chang, Chun-Yang Huang, and Tseung-Yuen Tseng, “Annealing Effect in ZrO2/HfO2 Bilayer Transparent RRAM Device” International Electron Devices and Materials Symposium 2014 (IEDMS 2014), Hualien, Taiwan, Nov. 20-21, 2014.
  3. Umesh Chand, Chun-Yang Huang, and Tseung-Yuen Tseng, “Switching Properties in ZrO2-Based Resistive Switching Device,” International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba, Ibaraki, Japan, Sep. 8-11, 2014.
  4. C​hun-Yang Huang, Umesh Chand, Chun-An Lin, and Tseung-Yuen Tseng, “Reduced the Oxygen Ions Consumption during Endurance Test in ZrOx/HfOy Bilayer RRAM Device,” The 3rd International Symposium on Next-Generation Electronics (ISNE 2014), Taoyuan, Taiwan, May 7-10, 2014.
  5. Umesh Chand and Tseung-Yuen Tseng “Tunnel Current in MIM System” Invited Speaker at conference on Emerging Trends of Science & Technology 9th November-2013, India.
  6. Umesh Chand, Chun-Yang Huang, and Tseung-Yuen Tseng, “Good Endurance and Reliability in ZnO/ZrO2 Double Layer RRAM Structure,” The 3rd International Symposium on Next-Generation Electronics (ISNE 2014), Taoyuan, Taiwan, May 7-10, 2014.
  7. Chun-Yang Huang, Umesh Chand, and Tseung-Yuen Tseng, “Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO2 Thin Film,” 2014 2nd International Conference on Materials and Manufacturing Research (ICMMR 2014), Guilin, China, Mar. 29-30, 2014. 
  8. Umesh Chand, Chun-Yang Huang, and Tseung-Yuen Tseng, “Bipolar Resistive Switching Characteristics in ZnO/ZrO2 Double Layer Structure,” International Electron Devices and Materials Symposium 2013 (IEDMS 2013), Nantou, Taiwan, Nov. 28-29, 2013.
  9. Umesh Chand, G.D. Varma “Optical properties of ZnO/TiO2 thin films,” Advancements in Microelectronics and Communication Technologies, Jaipur, India, March 15-17, 2013.
  10. Umesh Chand, G.D. Varma Advances in Wireless and Optical Communication Systems, Jaipur, India, Rajasthan March 17-18, 2012.

Education

Ph. D. in Electronics Engineering [2015], National Chiao Tung University, Taiwan. 

Scientific and Professional Memberships

Life Member of International Academy of Physical Science.

Awards

  •  High Achievement PhD thesis award by NCTU in 2015, Taiwan.
  •  Outstanding Academic Performance award by CTCI foundation in 2014, Taiwan.
  •  Outstanding Scholarship award by NCTU Taiwan in 2014.
  •  Golden Scholarship award by NCTU Taiwan in 2012.
  • Scholarship award by Ministry of Human Resource & Development (MHRD), India for   pursuing M.Tech.
  •  Qualified Graduate Aptitude Test in Engineering (GATE) 2007. (99 Percentile, All India rank 82), India.
  • Qualified Council of Scientific & Industrial Research Junior Research Fellowship (CSIR-JRF) 2007, India.

KAUST Affiliations

​​Computer, Electrical and Mathematical Sciences & Engineering Division​